Высокае напружанне N-канала магутнасці MOSFET LNB20N65

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

650

V

Continuous drain current     ( TC  = 25°C )

( TC  = 100°C )

ID

20

12.5

A

A

Pulsed drain current 1)

IDM

80

A

Gate-Source voltage

VGSS

±30

V

Avalanche energy, single pulse 2)

EAS

720

mJ

Peak diode recovery dv/dt 3)

dv/dt

5

V/ns

Power Dissipation   

TO-220F ( TC  = 25°C )     

Derate above 25°C

PD

45

0.36

W

W/°C

Power Dissipation

TO-247/TO-220 ( TC  = 25°C ) Derate above 25°C

250

2

W

W/°C

Operating junction and storage temperature range

TJ, TSTG

-55 to +150

°C

Continuous diode forward current

IS

20

A

Diode pulse current

IS,pulse

80

A